TMR Technology
What is Tunnel Magnetoresistance (TMR) and How Does Neuranics Leverage It?
Tunnel Magnetoresistance (TMR) is a quantum effect observed in magnetic tunnel junctions (MTJs). It occurs due to changes in the relative alignment of magnetisations between two ferromagnetic layers separated by an ultra-thin, non-magnetic barrier, causing significant variations in the tunneling current.
Understanding TMR
TMR technology leverages this quantum phenomenon, where the electrical resistance of an MTJ changes based on the alignment of its ferromagnetic layers. When a magnetic field influences the MTJ, the alignment of the magnetic moments in the layers shifts. If the magnetic moments are aligned parallel, resistance is low, allowing electrons to tunnel through easily. If they are antiparallel, resistance increases, reducing electron tunneling. This shift results in a measurable change in resistance, enabling precise detection of magnetic properties, including field strength, position, and direction.
