TMR Effect

Tunnel Magnetoresistance (TMR) is a quantum mechanical phenomenon in a nanoscale  in which the electrical resistance of a thin insulating barrier between two ferromagnetic layers changes significantly based on their relative magnetic alignment.

When the magnetisations of the layers are parallel, electrons can tunnel through the barrier easily, resulting in low resistance. However, when their magnetisations are antiparallel, electrons experience a higher energy barrier, causing a significant increase in resistance.

Neuranics’ technology harnesses the TMR effect, enabling the detection of small (pT) magnetic signals originating from organs of the body – for example the heart and muscles of the arms.

From Sensors to Sensing Systems

Neuranics’s chip-scale sensors and Application-specific integrated circuit systems are low-cost, scalable, low-power, and operate at room temperature.

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